Title :
Si integrated photoreceivers
Author :
Choi, Woo-Young ; Lee, Myung-Jae ; Youn, Jin-Sung
Author_Institution :
Dept. of Electr. & Electron. Eng., Yonsei Univ., Seoul, South Korea
Abstract :
This paper reviews 850nm Si photodetectors and integrated photoreceivers realized with standard Si process technologies including CMOS and BiCMOS. Such photodetectors and photoreceivers are of great interest as they can provide cost-effective optical interconnect receiver solutions. High-speed integrated photoreceivers can be achieved by spatially modulated light, lateral PIN, and P+/N-well junction photodetectors and their performances can be further enhanced with electronic equalizers, all of which can be realized with the standard Si technology.
Keywords :
BiCMOS integrated circuits; CMOS integrated circuits; optical receivers; photodetectors; BiCMOS integrated circuits; Si integrated photoreceivers; Si photodetectors; high-speed integrated photoreceivers; optical interconnect receiver; size 850 nm; standard Si process technologies; BiCMOS integrated circuits; CMOS integrated circuits; CMOS technology; Junctions; Optical receivers; Photodetectors; Silicon; Avalanche photodetector; Si avalanche photodetector; Si photodetector; Si photonics; integrated optical receiver; optical interconnect; photodetector; photodiode; photoreceiver;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2010 IEEE
Conference_Location :
Austin, TX
Print_ISBN :
978-1-4244-8578-9
DOI :
10.1109/BIPOL.2010.5667948
