Title :
High efficiency 28V class AB InGaP/GaAs HBT MMIC amplifier with integrated bias circuit
Author :
Wang, N.L. ; Dunnrowicz, C. ; Chen, X. ; Ma, W. ; Chau, H.F. ; Sun, X. ; Chen, Y. ; Lin, B. ; Lo, I.L. ; Huang, C.H. ; Yang, M.H.T.
Author_Institution :
EiC Corp., Fremont, CA, USA
Abstract :
InGaP/GaAs HBTs have demonstrated excellent lifetime and linearity performance for 3 to 10 V operation. This is very attractive for infrastructure applications. However, the low voltage is a drawback in this application where 28 V is a common voltage used. In this effort, a high voltage InGaP/GaAs HBT is developed for 28 V operation. The safe operation area is carefully designed, allowing the device to function in class A mode. A thermal resistance of 30/spl deg/C/W for a 1 W HBT design is measured using the V/sub be/ method. 4 W CW power with 71% efficiency is measured from this 1 W design, with a junction temperature rise of 49/spl deg/C. The integrated temperature compensated bias circuit provides <9% quiescent current change over base plate temperatures from -40 to +85/spl deg/C. Two tone and CDMA2000 linearity is also characterized. Initial WLR (wafer level reliability) results indicate that it has a similar lifetime to the standard InGaP/GaAs HBT.
Keywords :
3G mobile communication; III-V semiconductors; MMIC power amplifiers; bipolar MMIC; gallium compounds; heterojunction bipolar transistors; indium compounds; integrated circuit design; integrated circuit measurement; integrated circuit reliability; thermal management (packaging); thermal resistance; -40 to 85 degC; 1 W; 28 V; 3 to 10 V; 4 W; 71 percent; CDMA2000 linearity; CW power efficiency; InGaP-GaAs; WLR; base plate temperature range; class A mode amplifiers; high efficiency class AB InGaP/GaAs HBT MMIC amplifiers; high voltage HBT lifetime; integrated temperature compensated bias circuits; junction temperature rise; quiescent current change; safe operation area; thermal resistance; two tone linearity; wafer level reliability; Circuits; Electrical resistance measurement; Gallium arsenide; Heterojunction bipolar transistors; Linearity; MMICs; Power measurement; Temperature; Thermal resistance; Voltage;
Conference_Titel :
Microwave Symposium Digest, 2003 IEEE MTT-S International
Conference_Location :
Philadelphia, PA, USA
Print_ISBN :
0-7803-7695-1
DOI :
10.1109/MWSYM.2003.1212470
