Title :
Transient responses in amorphous silicon
Author :
Ambrozic, Vojka ; Furian, Joze ; Smole, Franc ; Besaneze, E.
Author_Institution :
Fac. of Electr. & Comput. Eng., Ljubljana Univ., Yugoslavia
Abstract :
In time-varying excitations any changes of free and trapped charge carrier densities affect the occupancy function reflecting back time variations of free charge carriers. This response, described with four time-dependent differential equations, is solved numerically. It is shown that the transient response depends mainly on shallow energy states. Deep energy levels previously considered as most effective generation-recombination centers have only negligible influence on transient response
Keywords :
amorphous semiconductors; carrier density; elemental semiconductors; silicon; transient response; a-Si; amorphous Si; carrier density; free charge carriers; occupancy function; semiconductor; shallow energy states; time-dependent differential equations; time-varying excitations; transient response; trapped charge carriers; Amorphous silicon; Charge carrier processes; Charge carriers; Electron emission; Electron traps; Energy capture; Energy states; Radioactive decay; Tail; Transient response;
Conference_Titel :
Electrotechnical Conference, 1991. Proceedings., 6th Mediterranean
Conference_Location :
LJubljana
Print_ISBN :
0-87942-655-1
DOI :
10.1109/MELCON.1991.161814
