Microwave-Frequency InAlP-oxide/GaAs MOSFETs

Author

Cao, Y. ; Zhang, J. ; Kosel, T.H. ; Hall, D.C. ; Fay, P.

Author_Institution

Dept. of Electr. Eng., Notre Dame Univ., IN

fYear

2006

Firstpage

43

Lastpage

46

Abstract

GaAs-channel MOSFETs employing InAlP native oxide gate dielectrics and achieving record microwave performance are reported. Devices with 1 mum gate length demonstrate measured f_t´s of 17.0 GHz with f_max´s of 74.8 GHz. Improved RF performance is obtained by vertical scaling of the device heterostructure to incorporate a 7.5 nm thick gate oxide layer. Despite the thin InAlP native oxide gate dielectric layer, a low gate leakage current density of 1.58 times 10 ^-4 A/cm² is obtained at 1 V bias

Keywords

III-V semiconductors; MOSFET; gallium arsenide; high-k dielectric thin films; indium compounds; 1 V; 1 micron; 17 GHz; 7.5 nm; 74.8 GHz; InAlP-GaAs; low gate leakage current density; microwave-frequency InAlP-oxide/GaAs MOSFET; oxide gate dielectrics; vertical scaling; Dielectrics and electrical insulation; Gallium arsenide; High speed optical techniques; Leakage current; Lithography; MOSFETs; Microwave devices; Neodymium; Photonic band gap; Wet etching;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductor Integrated Circuit Symposium, 2006. CSIC 2006. IEEE

Conference_Location

San Antonio, TX

Print_ISBN

1-4244-0126-7

Electronic_ISBN

1-4244-0127-5

Type

conf

DOI

10.1109/CSICS.2006.319874

Filename

4109974