Title :
1060nm high-power broadband InGaAs/GaAs quantum well thyristor-laser
Author :
Jiaoqing Pan ; Liu Zhen ; Huolei Wang ; JiaQi Wang ; Hongyan Yu
Author_Institution :
Key Lab. of Semicond. Mater. Sci., Inst. of Semicond., Beijing, China
Abstract :
Broadband spectrum is observed in 1060nm InGaAs/GaAs thyristor-lasers with two different structures PiNiN and PNiN. In this paper, we experimentally investigate and compare the performance of these two structures. The experimental results show that the PiNiN structure thyristor-laser with a reversed tunneling junction and two active regions, achieves a high power emitting with 790 mW and spectral range of ~51nm.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; quantum well lasers; tunnelling; InGaAs-GaAs; PNiN structure; PiNiN structure; broadband spectrum; high-power broadband quantum well thyristor-laser; power 790 mW; reversed tunneling junction; Broadband communication; Gallium arsenide; Indium gallium arsenide; Junctions; Lasers; Optical switches; Tunneling; broadband; high-power; thyristor-laser;
Conference_Titel :
Optical Communications and Networks (ICOCN), 2015 14th International Conference on
Conference_Location :
Nanjing
DOI :
10.1109/ICOCN.2015.7203597
