DocumentCode :
1645258
Title :
An anode hole injection percolation model for oxide breakdown-the "doom\´s day" scenario revisited
Author :
Alam, M.A. ; Bude, J. ; Weir, B. ; Silverman, P. ; Ghetti, A. ; Monroe, D. ; Cheung, K.P. ; Moccio, S.
Author_Institution :
Bell Lab., Murray Hill, NJ, USA
fYear :
1999
Firstpage :
715
Lastpage :
718
Abstract :
A comprehensive percolation model is used to explore the role of non-uniform trap generation process on oxide breakdown. We show that this non-uniform trap generation (due to SILC and roughness induced localization) makes interpretation of experimental data difficult and can lead to incorrect projections for reliability of ultra-thin oxides.
Keywords :
charge injection; electric breakdown; hole traps; leakage currents; percolation; anode hole injection; nonuniform trap generation; oxide breakdown; percolation model; roughness induced localization; stress induced leakage current; ultrathin oxide reliability; Anodes; Electric breakdown; Electron traps; Feedback; Lead compounds; Predictive models; Rough surfaces; Stress; Surface roughness; Tunneling;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1999. IEDM '99. Technical Digest. International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-5410-9
Type :
conf
DOI :
10.1109/IEDM.1999.824251
Filename :
824251
Link To Document :
بازگشت