Title :
Hydrodynamic simulations for advanced SiGe HBTs
Author :
Wedel, G. ; Schroter, M.
Author_Institution :
Dept. of Electron Devices & Integrated Circuits, Tech. Univ. Dresden, Dresden, Germany
Abstract :
The latest development of Silicon-Germanium (SiGe) HBTs has clearly demonstrated that the standard drift-diffusion model is not capable to predict the device performance. Thus more advanced simulation approaches are necessary such as simulators with hydrodynamic (HD) transport models. However, for realistic predictions, suitably calibrated models are required. In this paper, new accurate analytical models for the electron energy relaxation time and electron mobility are introduced that are suitable for implementation in HD TCAD simulators. These models are calibrated to simulation results obtained by the Boltzmann transport equation (BTE). Also a comparison with experimental data of an advanced SiGe HBT is given.
Keywords :
Boltzmann equation; heterojunction bipolar transistors; hydrodynamics; technology CAD (electronics); Boltzmann transport equation; HD TCAD simulators; SiGe HBT; Silicon-Germanium HBT; drift-diffusion model; hydrodynamic simulations; hydrodynamic transport; Doping; Equations; Germanium; High definition video; Lattices; Mathematical model; Semiconductor process modeling;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2010 IEEE
Conference_Location :
Austin, TX
Print_ISBN :
978-1-4244-8578-9
DOI :
10.1109/BIPOL.2010.5667955
