Hydrodynamic simulations for advanced SiGe HBTs

Author

Wedel, G. ; Schroter, M.

Author_Institution

Dept. of Electron Devices & Integrated Circuits, Tech. Univ. Dresden, Dresden, Germany

fYear

2010

Firstpage

237

Lastpage

244

Abstract

The latest development of Silicon-Germanium (SiGe) HBTs has clearly demonstrated that the standard drift-diffusion model is not capable to predict the device performance. Thus more advanced simulation approaches are necessary such as simulators with hydrodynamic (HD) transport models. However, for realistic predictions, suitably calibrated models are required. In this paper, new accurate analytical models for the electron energy relaxation time and electron mobility are introduced that are suitable for implementation in HD TCAD simulators. These models are calibrated to simulation results obtained by the Boltzmann transport equation (BTE). Also a comparison with experimental data of an advanced SiGe HBT is given.

Keywords

Boltzmann equation; heterojunction bipolar transistors; hydrodynamics; technology CAD (electronics); Boltzmann transport equation; HD TCAD simulators; SiGe HBT; Silicon-Germanium HBT; drift-diffusion model; hydrodynamic simulations; hydrodynamic transport; Doping; Equations; Germanium; High definition video; Lattices; Mathematical model; Semiconductor process modeling;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2010 IEEE

Conference_Location

Austin, TX

ISSN

1088-9299

Print_ISBN

978-1-4244-8578-9

Type

conf

DOI

10.1109/BIPOL.2010.5667955

Filename

5667955