Monte Carlo simulation of quantum yields exceeding unity as a probe of high-energy hole scattering rates in Si

Author

Kamakura, Y. ; Kawashima, I. ; Deguchi, K. ; Taniguchi, K.

Author_Institution

Dept. of Electron. & Inf. Syst., Osaka Univ., Japan

fYear

1999

Firstpage

727

Lastpage

730

Abstract

High-energy hole scattering rates for a full band Monte Carlo simulation in Si are verified using the quantum-yield experiment. We compare two models that yield the correct velocity-field and ionization coefficient characteristics but quite different energy distributions. It is demonstrated that quantum yields exceeding unity can be used as a probe of hole scattering rates in Si; the model based on ab initio impact ionization rate shows goad agreement With the experiments.

Keywords

Monte Carlo methods; elemental semiconductors; hole mobility; hot carriers; impact ionisation; silicon; Monte Carlo simulation; Si; ab initio impact ionization rate; energy distributions; high-energy hole scattering rates; hole scattering rates; ionization coefficient characteristics; quantum yields; velocity-field characteristics; Acoustic scattering; Deformable models; Electron mobility; Hot carriers; Impact ionization; Information systems; Optical scattering; Particle scattering; Phonons; Probes;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1999. IEDM '99. Technical Digest. International

Conference_Location

Washington, DC, USA

Print_ISBN

0-7803-5410-9

Type

conf

DOI

10.1109/IEDM.1999.824254

Filename

824254