Title :
Monte Carlo simulation of quantum yields exceeding unity as a probe of high-energy hole scattering rates in Si
Author :
Kamakura, Y. ; Kawashima, I. ; Deguchi, K. ; Taniguchi, K.
Author_Institution :
Dept. of Electron. & Inf. Syst., Osaka Univ., Japan
Abstract :
High-energy hole scattering rates for a full band Monte Carlo simulation in Si are verified using the quantum-yield experiment. We compare two models that yield the correct velocity-field and ionization coefficient characteristics but quite different energy distributions. It is demonstrated that quantum yields exceeding unity can be used as a probe of hole scattering rates in Si; the model based on ab initio impact ionization rate shows goad agreement With the experiments.
Keywords :
Monte Carlo methods; elemental semiconductors; hole mobility; hot carriers; impact ionisation; silicon; Monte Carlo simulation; Si; ab initio impact ionization rate; energy distributions; high-energy hole scattering rates; hole scattering rates; ionization coefficient characteristics; quantum yields; velocity-field characteristics; Acoustic scattering; Deformable models; Electron mobility; Hot carriers; Impact ionization; Information systems; Optical scattering; Particle scattering; Phonons; Probes;
Conference_Titel :
Electron Devices Meeting, 1999. IEDM '99. Technical Digest. International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-5410-9
DOI :
10.1109/IEDM.1999.824254
