Title :
Study of negative bias on the IGBT´s gate
Author :
Sandali, A.H. ; Jaafari, Alain ; Picard, Jean Pierre
Author_Institution :
Equipe d´´Electron. de Puissance, Univ. Blaise Pascal, Aubiere, France
Abstract :
A negative gate bias during the IGBT´s (insulated gate bipolar transistor´s) turn off modifies the switching parameters. This effect is highlighted and analyzed. Unlike the MOS transistor, the IGBT´s turn-off behavior at high frequency with negative gate bias shows a strong inversion layer at the oxide-n-semiconductor interface. A simplified model is used to show the improvements in delay time and current and voltage switching speeds brought about by the negative gate bias. The negative bias can reduce the turn-off losses by 25%
Keywords :
delays; insulated gate bipolar transistors; losses; semiconductor device models; switching; HF; IGBT; delay time; high frequency; inversion layer; losses; negative gate bias; oxide-n-semiconductor interface; semiconductor device models; switching; turn off; Anodes; Conductors; Delay effects; Frequency; Insulated gate bipolar transistors; Low voltage; MOS capacitors; MOSFETs; Space charge; Tail;
Conference_Titel :
Industrial Electronics Society, 1990. IECON '90., 16th Annual Conference of IEEE
Conference_Location :
Pacific Grove, CA
Print_ISBN :
0-87942-600-4
DOI :
10.1109/IECON.1990.149288
