A planar-diode frequency tripler at 1.9THz

Author

Maestrini, A. ; Ward, J. ; Gill, J. ; Chattopadhyay, G. ; Maiwald, F. ; Ellis, K. ; Javadi, H. ; Mehdi, I.

Author_Institution

Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA

Volume

2

fYear

2003

Firstpage

747

Abstract

A fix-tuned 1.9 THz frequency tripler utilizing membrane based GaAs Schottky diodes has been designed and fabricated. The chips are three microns thick with no supporting frame. One micron thick beam leads are used to ground the diodes and to hold the circuit in a split-waveguide block. Both unbalanced and balanced designs have been considered. Preliminary tests at room temperature indicate that the balanced tripler covers the band 1780-1900GHz with output power around 0.5/spl mu/W when pumped with 3mW. Up to 1.5/spl mu/W at 1810 GHz was measured when the input power was increased to 5mW.

Keywords

III-V semiconductors; Schottky diodes; frequency multipliers; gallium arsenide; membranes; submillimetre wave diodes; 0.5 to 1.5 muW; 1.9 THz; 1780 to 1900 GHz; GaAs; GaAs Schottky diode; balanced design; fix-tuned planar-diode frequency tripler; membrane; split-waveguide block; unbalanced design; Anodes; Biomembranes; Circuit simulation; Circuit synthesis; Frequency; Java; Laboratories; Propulsion; Robustness; Schottky diodes;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2003 IEEE MTT-S International

Conference_Location

Philadelphia, PA, USA

ISSN

0149-645X

Print_ISBN

0-7803-7695-1

Type

conf

DOI

10.1109/MWSYM.2003.1212479

Filename

1212479