Title :
A fully integrated Q-band bidirectional transceiver in 0.12-µm SiGe BiCMOS technology
Author :
Kim, Joohwa ; Buckwalter, James F.
Author_Institution :
Univ. of California-San Diego, La Jolla, CA, USA
Abstract :
A fully integrated Q-band (40~45 GHz) bidirectional transceiver is demonstrated in a 0.12-μm SiGe BiCMOS technology. The RF front-end design eliminates the need for transmit/receive switches by demonstrating a novel PA/LNA circuit. The transceiver has a transmit conversion gain of 35 dB with a 3-dB bandwidth of 4 GHz. The OP1dB is 8.5 dBm and Psat is 9.5 dBm. The transceiver has a receive conversion gain of 34 dB with a 3-dB bandwidth of 3 GHz. The noise figure is 4.7 dB and OP1dB is -5 dBm at 43 GHz. The chip consumes 119.4 mW when transmitting and 54 mW when receiving, and overall chip size is 1.6 mm×0.8 mm including pads. To the author´s knowledge, this work represents the first switchless millimeter-wave bidirectional transceiver in a CMOS or BiCMOS processes.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; MMIC power amplifiers; low noise amplifiers; power amplifiers; semiconductor materials; transceivers; PA/LNA circuit; RF front-end design; SiGe BiCMOS technology; frequency 40 GHz to 45 GHz; fully integrated Q-band bidirectional transceiver; receive conversion gain; size 0.12 mum; switchless millimeter-wave bidirectional transceiver; transmit/receive switches; BiCMOS integrated circuits; Gain; Impedance matching; Loss measurement; Noise; Radio frequency; Transceivers;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2010 IEEE
Conference_Location :
Austin, TX
Print_ISBN :
978-1-4244-8578-9
DOI :
10.1109/BIPOL.2010.5667959
