Title :
A novel de-embedding technique for On-Wafer characterization of RF CMOS
Author :
Loo, X.S. ; Yeo, K.S. ; Chew, K.W.J. ; Chan, L.H.K. ; Ong, S.N. ; Do, M.A. ; Boon, C.C.
Author_Institution :
Sch. of Electr. Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore
Abstract :
A novel de-embedding technique based on general fixture model is proposed to accurately de-embed the test fixture parasitic for characterization of RF CMOS at high frequency. The method is able to avoid over-de-embedding errors that exist in conventional techniques by utilizing three Thru structures of zero length and one Open dummy test structures for accurate extraction of fixture parasitic. The de-embedding result is verified with Thru line replaced as intrinsic device and has been shown matching closer to the actual intrinsic Thru line than other compared techniques for frequency of up to 50 GHz.
Keywords :
CMOS integrated circuits; radiofrequency integrated circuits; Open dummy test structures; RF CMOS; de-embedding technique; fixture parasitic; general fixture model; intrinsic Thru line; on-wafer characterization; CMOS technology; Circuit testing; Fixtures; Geometry; Industrial electronics; Integrated circuit interconnections; Radio frequency; Scattering parameters; Semiconductor device modeling; Silicon; De-embedding; Fixture parasitic; High frequency characterization; RF CMOS; Scattering parameters;
Conference_Titel :
SoC Design Conference (ISOCC), 2009 International
Conference_Location :
Busan
Print_ISBN :
978-1-4244-5034-3
Electronic_ISBN :
978-1-4244-5035-0
DOI :
10.1109/SOCDC.2009.5423849
