DocumentCode
1645438
Title
Light emission from MOS tunnel diodes
Author
Versari, R. ; Pieracci, A. ; Manfredi, Marco ; Soncini, G. ; Bellutti, P. ; Ricci, Bruno
Author_Institution
Bologna Univ., Italy
fYear
1999
Firstpage
745
Lastpage
748
Abstract
Special MOS tunneling structures which, avoiding the obscuring effects of the polysilicon layer, exhibit excellent light emission characteristics, have been fabricated and tested. For the first time, it is shown that the experimental photon energy distributions of MOS tunnel diodes biased in the Fowler-Nordheim regime exhibit a peak at about 1.6 eV, likely due to hot-carrier radiative recombination phenomena.
Keywords
MIS devices; electron-hole recombination; elemental semiconductors; hot carriers; photodiodes; silicon; tunnel diodes; 1.6 eV; Fowler-Nordheim regime; MOS tunnel diodes; MOS tunneling structures; Si; hot-carrier radiative recombination phenomena; light emission characteristics; photon energy distributions; Anodes; Cathodes; Diodes; Electron emission; Hot carriers; Materials testing; Physics; Radiative recombination; Silicon devices; Tunneling;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1999. IEDM '99. Technical Digest. International
Conference_Location
Washington, DC, USA
Print_ISBN
0-7803-5410-9
Type
conf
DOI
10.1109/IEDM.1999.824258
Filename
824258
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