Title :
TCAD assisted reflection on parameter extraction for compact modeling
Author :
Steigerwald, Jake ; Humphries, Paul
Author_Institution :
Analog Devices, Wilmington, MA, USA
Abstract :
Base resistance extraction for small geometry, self aligned bipolar transistors has become more problematic as the other resistances and capacitances effecting the input impedance have become more significant and distributed. Following an introduction to Analog Devices´ XFCB3 process, this paper will review a combination of measured results, TCAD simulations and Spice analysis of hybrid-p equivalent circuits which were used to better understand the base resistance extraction issues.
Keywords :
bipolar transistors; semiconductor device models; technology CAD (electronics); Spice analysis; TCAD assisted reflection; TCAD simulations; analog device XFCB3 process; base resistance extraction; capacitances; compact modeling; hybrid-p equivalent circuits; parameter extraction; self aligned bipolar transistors; Capacitance; Data mining; Equivalent circuits; Impedance; Integrated circuit modeling; Resistance; Silicon bipolar/BiCMOS process technology; bipolar modeling and simulation; device physics;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2010 IEEE
Conference_Location :
Austin, TX
Print_ISBN :
978-1-4244-8578-9
DOI :
10.1109/BIPOL.2010.5667961
