Title :
MMIC Class-F Power Amplifiers using Field-Plated AlGaN/GaN HEMTs
Author :
Gao, Steven ; Xu, Hongtao ; Mishra, Umesh K. ; York, Robert A.
Author_Institution :
Sch. of Eng., Northumbria Univ., Newcastle Upon Tyne
Abstract :
Two simple class-F MMIC power amplifiers are described using 0.7mum field-plated GaN HEMT devices. One circuit was designed for operation at 2.0 GHz and achieved a power-added-efficiency of 50%, 38 dBm output power, and 6.2 W/mm power density. A second circuit was designed at 2.8 GHz and achieved a PAE of 46% with 37 dBm output power and 7.0 W/mm power density
Keywords :
MMIC power amplifiers; gallium compounds; high electron mobility transistors; wide band gap semiconductors; GaN; GaN HEMT; MMIC; class F power amplifier; high efficiency; Aluminum gallium nitride; Circuit simulation; Gallium arsenide; Gallium nitride; HEMTs; MMICs; MODFETs; Power amplifiers; Power harmonic filters; Voltage; GaN HEMT; MMIC; Power amplifier; class F; high efficiency; high power;
Conference_Titel :
Compound Semiconductor Integrated Circuit Symposium, 2006. CSIC 2006. IEEE
Conference_Location :
San Antonio, TX
Print_ISBN :
1-4244-0126-7
Electronic_ISBN :
1-4244-0127-5
DOI :
10.1109/CSICS.2006.319884
