Title :
Wide-Bandwidth InGaP-GaAs HBT Voltage-Controlled Oscillators in K- and Ku-Band
Author :
Chiong, Chau-Ching ; Chang, Hong-Yeh ; Chen, Ming-Tang
Author_Institution :
Inst. of Astron. & Astrophys., Acad. Sinica, Taipei
Abstract :
A series of voltage-controlled oscillator (VCO) covering 12 to 21 GHz with double-tuned configuration using commercially available 2-mum GaAs heterojunction bipolar transistor (HBT) technology is presented. Double-tuned topology improves the tuning bandwidth and linearity in voltage sensitivity. The tuning bandwidth of the VCOs ranges from 21 to 25%, with phase noise of -117 to -124 dBc/Hz at 1 MHz offset from the carrier. The overall dc power consumption of the VCO is 75 mW with a supply voltage of -3 V. To the best authors´ knowledge, this work demonstrates the best FOM among all the reported VCOs at K- and Ku- band, when tuning range is taken into account.
Keywords :
III-V semiconductors; circuit tuning; gallium arsenide; heterojunction bipolar transistors; indium compounds; microwave oscillators; phase noise; voltage-controlled oscillators; InGaP-GaAs; K band; Ku-band; VCO; double-tuned configuration; frequency 12 GHz to 21 GHz; heterojunction bipolar transistor; phase noise; size 2 mum; voltage-controlled oscillator; wide-bandwidth InGaP-GaAs HBT technology; Bandwidth; Energy consumption; Gallium arsenide; Heterojunction bipolar transistors; Linearity; Phase noise; Topology; Tuning; Voltage; Voltage-controlled oscillators; GaAs; HBT; VCO; low phase noise; wide tuning range;
Conference_Titel :
Millimeter Waves, 2008. GSMM 2008. Global Symposium on
Conference_Location :
Nanjing
Print_ISBN :
978-1-4244-1885-5
Electronic_ISBN :
978-1-4244-1886-2
DOI :
10.1109/GSMM.2008.4534594
