GaN Wide Band Power Integrated Circuits

Author

Conlon, J.P. ; Zhang, N. ; Poulton, M.J. ; Shealy, J.B. ; Vetury, R. ; Green, D.S. ; Brown, J.D. ; Gibb, S.

Author_Institution

RF Micro Devices Inc., Charlotte, NC

fYear

2006

Firstpage

85

Lastpage

88

Abstract

Gallium nitride (GaN) amplifiers have demonstrated very high power density as well as wide bandwidth in previous research. This paper examines their use in supplying flat gain, power, and linearity across a large bandwidth. It demonstrates two types of power amplifiers: a Ft Doubler (FT2) amplifier and a Cascode amplifier, both of which require a simple PCB tune. Both amplifiers show 0.2 to 4GHz bandwidth with 30 dBm PldB output power. The 3GPP WCDMA output power is 20 dBm at -45 dBc ACLR. Also, a WiMAX design is presented for the 3.2-3.8 GHz band to show the feasibility of a GaN HEMT amplifier in a relatively broad band, high linearity commercial application, with 27 dBm output at 2% EVM

Keywords

3G mobile communication; HEMT integrated circuits; III-V semiconductors; MMIC power amplifiers; WiMax; gallium compounds; power integrated circuits; wide band gap semiconductors; 3.2 to 3.8 GHz; Cascode amplifier; Ft Doubler amplifier; GaN; HEMT; WiMAX; high electron mobility transistor; power amplifiers; software defined radio; wide band power integrated circuits; Bandwidth; Gallium nitride; High power amplifiers; III-V semiconductor materials; Linearity; Power amplifiers; Power generation; Power integrated circuits; Power supplies; Wideband; Gallium Nitride (GaN); High Electron Mobility Transistor (HEMT); Linearity; Power Amplifiers; Software Defined Radio; WiMAX; Wide Band;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductor Integrated Circuit Symposium, 2006. CSIC 2006. IEEE

Conference_Location

San Antonio, TX

Print_ISBN

1-4244-0126-7

Electronic_ISBN

1-4244-0127-5

Type

conf

DOI

10.1109/CSICS.2006.319885

Filename

4109986