Title :
Implication of baseband impedance and bias for FET amplifier linearization
Author :
Brinkhoff, J. ; Parker, A.E.
Author_Institution :
Dept. of Electron., Macquarie Univ., Sydney, NSW, Australia
Abstract :
Baseband impedance can have a positive or negative effect on the intermodulation of microwave circuits. Concise formulae are shown to be useful to a designer to select intelligently a FET and its bias on the basis of the impact of baseband impedance on intermodulation. Memoryless predistortion techniques are shown to be effective over wide bandwidths at a suitable bias.
Keywords :
intermodulation distortion; linearisation techniques; microwave amplifiers; microwave field effect transistors; FET amplifier; baseband impedance; bias dependence; intermodulation distortion; memoryless predistortion linearization; microwave circuit; Bandwidth; Baseband; Broadband amplifiers; Feedback; Frequency; Impedance; Microwave FETs; Microwave circuits; Predistortion; Voltage;
Conference_Titel :
Microwave Symposium Digest, 2003 IEEE MTT-S International
Conference_Location :
Philadelphia, PA, USA
Print_ISBN :
0-7803-7695-1
DOI :
10.1109/MWSYM.2003.1212487
