• DocumentCode
    1645556
  • Title

    5W GaN MMIC for Millimeter-Wave Applications

  • Author

    Boutros, K.S. ; Luo, W.B. ; Ma, Y. ; Nagy, G. ; Hacker, J.

  • Author_Institution
    Rockwell Sci. Co., Thousand Oaks, CA
  • fYear
    2006
  • Firstpage
    93
  • Lastpage
    95
  • Abstract
    Power amplifier MMICs were designed and fabricated using micro-strip topology on 3-mil thinned semi-insulating SiC substrates with through vias. A two-stage 50-ohm matched Ka-band MMIC with an output-stage composed of a 1.2-mm-wide device operated with Psat of 5 Watts at 26.5 GHz, corresponding to a power density of 3.1 W/mm, with an associated gain of 9dB and a PAE of 20%. The MMIC produced 13 plusmn1dB of linear gain from 25GHz to 30GHz with an associated P3dB of > 3 watts across the band. These results are the best combination of output power and power density reported from a Ka-band GaN MMIC to date
  • Keywords
    MMIC power amplifiers; field effect transistors; gallium compounds; wide band gap semiconductors; 5 W; GaN FET; GaN MMIC; millimeter wave applications; power amplifier; Fabrication; Gain; Gallium nitride; MMICs; Millimeter wave communication; Millimeter wave radar; Power amplifiers; Silicon carbide; Substrates; Topology; GaN FET; Millimeter-Wave MMICs; Power Amplifier;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Compound Semiconductor Integrated Circuit Symposium, 2006. CSIC 2006. IEEE
  • Conference_Location
    San Antonio, TX
  • Print_ISBN
    1-4244-0126-7
  • Electronic_ISBN
    1-4244-0127-5
  • Type

    conf

  • DOI
    10.1109/CSICS.2006.319922
  • Filename
    4109988