Title :
5W GaN MMIC for Millimeter-Wave Applications
Author :
Boutros, K.S. ; Luo, W.B. ; Ma, Y. ; Nagy, G. ; Hacker, J.
Author_Institution :
Rockwell Sci. Co., Thousand Oaks, CA
Abstract :
Power amplifier MMICs were designed and fabricated using micro-strip topology on 3-mil thinned semi-insulating SiC substrates with through vias. A two-stage 50-ohm matched Ka-band MMIC with an output-stage composed of a 1.2-mm-wide device operated with Psat of 5 Watts at 26.5 GHz, corresponding to a power density of 3.1 W/mm, with an associated gain of 9dB and a PAE of 20%. The MMIC produced 13 plusmn1dB of linear gain from 25GHz to 30GHz with an associated P3dB of > 3 watts across the band. These results are the best combination of output power and power density reported from a Ka-band GaN MMIC to date
Keywords :
MMIC power amplifiers; field effect transistors; gallium compounds; wide band gap semiconductors; 5 W; GaN FET; GaN MMIC; millimeter wave applications; power amplifier; Fabrication; Gain; Gallium nitride; MMICs; Millimeter wave communication; Millimeter wave radar; Power amplifiers; Silicon carbide; Substrates; Topology; GaN FET; Millimeter-Wave MMICs; Power Amplifier;
Conference_Titel :
Compound Semiconductor Integrated Circuit Symposium, 2006. CSIC 2006. IEEE
Conference_Location :
San Antonio, TX
Print_ISBN :
1-4244-0126-7
Electronic_ISBN :
1-4244-0127-5
DOI :
10.1109/CSICS.2006.319922
