Title :
A GaN HEMT Class F Amplifier at 2 GHz with > 80 % PAE
Author :
Schmelzer, David ; Long, Stephen I.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA
Abstract :
A Class F amplifier has been designed, fabricated, and tested using a GaN HEMT transistor and a hybrid PCB. The amplifier has a peak PAE of 85 % with an output power of 16.5 W. An output power and drain efficiency tradeoff, dependant on the drain impedance at the fundamental frequency due to the on-state resistance, is explored. A comparison between Class F and inverse F, given particular operating conditions for this device, are made
Keywords :
III-V semiconductors; gallium compounds; high electron mobility transistors; hybrid integrated circuits; microwave power amplifiers; printed circuits; wide band gap semiconductors; 16.5 W; 2 GHz; GaN; HEMT; PAE; class F amplifier; hybrid PCB; inverse F; Capacitance; Circuits; Frequency; Gallium arsenide; Gallium nitride; HEMTs; Impedance; Power amplifiers; Power generation; Voltage; Class F; GaN HEMT; Inverse F;
Conference_Titel :
Compound Semiconductor Integrated Circuit Symposium, 2006. CSIC 2006. IEEE
Conference_Location :
San Antonio, TX
Print_ISBN :
1-4244-0126-7
Electronic_ISBN :
1-4244-0127-5
DOI :
10.1109/CSICS.2006.319923
