Title :
69 GHz frequency divider with a cantilevered base InP DHBT
Author :
Gutierrez-Aitken, A. ; Kaneshiro, E. ; Tang, B. ; Notthoff, J. ; Chin, P. ; Streit, D. ; Oki, A.
Author_Institution :
Space & Electron. Group, TRW Inc., Redondo Beach, CA, USA
Abstract :
High speed digital logic is essential in diverse applications such as optical communication, frequency synthesizers, and analog-digital conversion. Current research efforts indicate that technologies utilizing heterojunction bipolar transistors (HBT) are the preferred approach for systems operating at clock frequencies of 40 GHz and above. In this paper we report a novel InAlAs/InGaAs/InP double-HBT (DHBT) with a cantilevered base layer and undercut collector. We fabricated and demonstrated a 69 GHz 2:1 digital frequency divider using this technology, which is, to our knowledge, the fastest divider reported to date in any semiconductor technology.
Keywords :
III-V semiconductors; aluminium compounds; bipolar logic circuits; current-mode logic; frequency dividers; gallium arsenide; heterojunction bipolar transistors; high-speed integrated circuits; indium compounds; integrated circuit design; 2:1 digital frequency divider; 69 GHz frequency divider; 69.1 GHz; 70 mW; InAlAs-InGaAs-InP; InAlAs/InGaAs/InP double-HBT; InP; analog-digital conversion; cantilevered base InP DHBT; cantilevered base layer; clock frequencies; current mode logic master-slave flip-flop; frequency synthesizers; heterojunction bipolar transistors; high speed digital logic; optical communication; power dissipation; undercut collector; Clocks; Frequency conversion; Frequency synthesizers; Heterojunction bipolar transistors; Indium compounds; Indium gallium arsenide; Indium phosphide; Logic; Optical fiber communication; Optical frequency conversion;
Conference_Titel :
Electron Devices Meeting, 1999. IEDM '99. Technical Digest. International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-5410-9
DOI :
10.1109/IEDM.1999.824266