Title :
Metamorphic In/sub 0.52/Al/sub 0.48/As/In/sub 0.53/Ga/sub 0.47/As HEMTs on GaAs substrate with f/sub T/ over 200 GHz
Author :
Dumka, D.C. ; Hoke, W.E. ; Lemonias, P.J. ; Cueva, G. ; Adesida, I.
Author_Institution :
Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA
Abstract :
The growth, fabrication, and characterization of metamorphic In/sub 0.52/Al/sub 0.48/As/In/sub 0.53/Ga/sub 0.47/As high electron mobility transistors (HEMTs) on GaAs substrates are reported. The layer structure is grown using molecular beam epitaxy (MBE). Devices with gate lengths ranging from 0.18 to 1.0 /spl mu/m have been fabricated. Devices show large saturation current densities with values up to 900 mA/mm. The extrinsic transconductances ranging from 680 mS/mm for 1.0 /spl mu/m device to over 1.0 S/mm for 0.18 /spl mu/m device are obtained. Very high cut-off frequencies (f/sub T/´s) ranging from 32 GHz to 204 GHz are presented.
Keywords :
III-V semiconductors; aluminium compounds; current density; gallium arsenide; high electron mobility transistors; indium compounds; millimetre wave field effect transistors; molecular beam epitaxial growth; semiconductor device measurement; 0.18 to 1 mum; 32 to 204 GHz; 680 mS/mm to 1 S/mm; GaAs; GaAs substrate; In/sub 0.52/Al/sub 0.48/As-In/sub 0.53/Ga/sub 0.47/As; MM-HEMT technology; extrinsic transconductance; fabrication; gate length; growth; high cut-off frequencies; layer structure; metamorphic In/sub 0.52/Al/sub 0.48/As/In/sub 0.53/Ga/sub 0.47/As HEMTs; molecular beam epitaxy; saturation current densities; unity current gain cutoff frequency; Buffer layers; Cutoff frequency; Fabrication; Gallium arsenide; HEMTs; Indium compounds; Indium gallium arsenide; MODFETs; Molecular beam epitaxial growth; Substrates;
Conference_Titel :
Electron Devices Meeting, 1999. IEDM '99. Technical Digest. International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-5410-9
DOI :
10.1109/IEDM.1999.824267
