Title :
Field-Plate Optimization of AlGaN/GaN HEMTs
Author :
Palankovski, Vassil ; Vitanov, Stanislav ; Quay, Radiger
Author_Institution :
Adv. Mater. & Device Anal. Group, Inst. for Microelectron., Wien
Abstract :
An investigation on the field plate technique in AlGaN/GaN power HEMTs is presented. The critical geometrical variables controlling the field distribution in the channel are determined and optimized for improved device reliability using two-dimensional numerical simulations. The results are implemented in the design of devices fabricated with 600 nm down to 150 nm gate lengths. Good agreement between experimental and simulation data is achieved
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; numerical analysis; power HEMT; semiconductor device reliability; wide band gap semiconductors; 150 nm; 2D numerical simulations; 600 nm; AlGaN-GaN; critical geometrical variables; device reliability; field distribution; field-plate optimization; gate lengths; power HEMT; Aluminum gallium nitride; Analytical models; Contacts; Electrons; Gallium nitride; HEMTs; MODFETs; Microelectronics; Physics; Solid state circuits;
Conference_Titel :
Compound Semiconductor Integrated Circuit Symposium, 2006. CSIC 2006. IEEE
Conference_Location :
San Antonio, TX
Print_ISBN :
1-4244-0126-7
Electronic_ISBN :
1-4244-0127-5
DOI :
10.1109/CSICS.2006.319926
