Development of Ru/Ta/sub 2/O/sub 5//Ru capacitor technology for giga-scale DRAMs

Author

Jin-Won Kim ; Sang-Don Nam ; Seung-Hwan Lee ; Seok-Jun Won ; Wan-Don Kim ; Cha-Young Yoo ; Young-Wook Park ; Sang-In Lee ; Moon-Yong Lee

Author_Institution

Semicond. R&D Center, Samsung Electron. Co. Ltd., Kyungki, South Korea

fYear

1999

Firstpage

793

Lastpage

796

Abstract

In this paper, the Ru/crystalline-Ta/sub 2/O/sub 5//Ru capacitor was investigated. We studied the electrical properties and introduced an Al/sub 2/O/sub 3/ capping layer to prohibit the degradation of the leakage current resulted from H/sub 2/ annealing. Also, the Ru cylinder-type structure was suggested as a 3-dimensional storage node shape and was confirmed in its extendibility to 0.1 /spl mu/m-scaled design rule.

Keywords

DRAM chips; MIM devices; annealing; dielectric thin films; leakage currents; permittivity; ruthenium; tantalum compounds; thin film capacitors; 0.1 mum; 3D storage node shape; 4 Gbit; Al/sub 2/O/sub 3/; Al/sub 2/O/sub 3/ capping layer; H/sub 2/ annealing; N/sub 2/-H/sub 2/; Ru cylinder-type structure; Ru-Ta/sub 2/O/sub 5/-Ru; Ru/Ta/sub 2/O/sub 5//Ru capacitor technology; electrical properties; giga-scale DRAMs; leakage current degradation; scaled design rule; Buffer layers; Capacitors; Crystallization; Dielectric constant; Dielectric measurements; Electrodes; High-K gate dielectrics; Leakage current; Random access memory; Silicon compounds;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1999. IEDM '99. Technical Digest. International

Conference_Location

Washington, DC, USA

Print_ISBN

0-7803-5410-9

Type

conf

DOI

10.1109/IEDM.1999.824269

Filename

824269