Title :
A high performance, low complexity 14V Complementary BiCMOS process built on bulk silicon
Author :
Thibeault, Todd ; Preisler, Edward ; Zheng, Jie ; Lao, Lynn ; Hurwitz, Paul ; Racanelli, Marco
Author_Institution :
Jazz Semicond., Inc., Newport Beach, CA, USA
Abstract :
This paper details a new 14V Complementary BiCMOS (CBiCMOS) addition to the TowerJazz SBC35 family of BiCMOS technologies. The SBC35 family previously supported BVceo values up to 6V. The bipolar architecture is nearly identical with that used in the lower voltage technologies, leveraging 10 years of manufacturing history. The complementary bipolar transistors are paired with 5V CMOS currently available in our SBC35 family. This technology offers high RF performance 14V NPN transistors and PNP transistors with low process complexity. The paper describes a simplified process flow, results of optimization, and a demonstration of the key device performance metrics.
Keywords :
BiCMOS integrated circuits; bipolar transistors; circuit optimisation; elemental semiconductors; silicon; NPN transistors; PNP transistors; Si; TowerJazz SBC35 family; bipolar architecture; bulk silicon; complementary BiCMOS process; complementary bipolar transistors; manufacturing history; optimization; voltage 14 V; voltage 5 V; BiCMOS integrated circuits; CMOS integrated circuits; Implants; Optimization; Performance evaluation; Silicon; Silicon germanium; Complementary BiCMOS technology; DSL driver application; SiGe NPN; silicon VPNP;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2010 IEEE
Conference_Location :
Austin, TX
Print_ISBN :
978-1-4244-8578-9
DOI :
10.1109/BIPOL.2010.5667972
