Title :
A hydrogen barrier interlayer dielectric with a SiO/sub 2//SiON/SiO/sub 2/ stacked film for logic-embedded FeRAMs
Author :
Nakura, T. ; Mori, H. ; Inoue, N. ; Ikarashi, N. ; Takahashi, S. ; Kasai, N.
Author_Institution :
ULSI Device Dev. Lab., NEC Corp., Sagamihara, Japan
Abstract :
When the hydrogen barrier interlayer dielectric described in this paper covers an FeRAM macro region, it prevents degradation of the Ir/IrO/sub 2//PZT/Pt-ferroelectric capacitor characteristics during forming gas annealing at 400/spl deg/C for 20 min in a 50%-hydrogen ambient. MOSFET characteristics degraded during formation of the ferroelectric capacitors and metal wiring are completely restored by hydrogen annealing after the metal wiring is formed.
Keywords :
MOSFET; annealing; dielectric thin films; diffusion barriers; embedded systems; ferroelectric capacitors; ferroelectric storage; integrated circuit reliability; leakage currents; random-access storage; silicon compounds; 20 min; 400 C; FeRAM macro region; H/sub 2/ barrier interlayer dielectric; Ir-IrO/sub 2/-PZT-Pt; Ir-IrO2-PbZrO3TiO3-Pt; Ir/IrO/sub 2//PZT/Pt-ferroelectric capacitor characteristics; MOSFET characteristics degradation; N/sub 2/-H/sub 2/; SiO/sub 2/-SiON-SiO/sub 2/; SiO/sub 2//SiON/SiO/sub 2/ stacked film; forming gas annealing; leakage current characteristics; logic-embedded FeRAMs; metal wiring; reliability; Annealing; Capacitors; Degradation; Dielectrics; Ferroelectric films; Hydrogen; MOSFET circuits; Nonvolatile memory; Random access memory; Wiring;
Conference_Titel :
Electron Devices Meeting, 1999. IEDM '99. Technical Digest. International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-5410-9
DOI :
10.1109/IEDM.1999.824271
