A hydrogen barrier interlayer dielectric with a SiO/sub 2//SiON/SiO/sub 2/ stacked film for logic-embedded FeRAMs

Author

Nakura, T. ; Mori, H. ; Inoue, N. ; Ikarashi, N. ; Takahashi, S. ; Kasai, N.

Author_Institution

ULSI Device Dev. Lab., NEC Corp., Sagamihara, Japan

fYear

1999

Firstpage

801

Lastpage

804

Abstract

When the hydrogen barrier interlayer dielectric described in this paper covers an FeRAM macro region, it prevents degradation of the Ir/IrO/sub 2//PZT/Pt-ferroelectric capacitor characteristics during forming gas annealing at 400/spl deg/C for 20 min in a 50%-hydrogen ambient. MOSFET characteristics degraded during formation of the ferroelectric capacitors and metal wiring are completely restored by hydrogen annealing after the metal wiring is formed.

Keywords

MOSFET; annealing; dielectric thin films; diffusion barriers; embedded systems; ferroelectric capacitors; ferroelectric storage; integrated circuit reliability; leakage currents; random-access storage; silicon compounds; 20 min; 400 C; FeRAM macro region; H/sub 2/ barrier interlayer dielectric; Ir-IrO/sub 2/-PZT-Pt; Ir-IrO2-PbZrO3TiO3-Pt; Ir/IrO/sub 2//PZT/Pt-ferroelectric capacitor characteristics; MOSFET characteristics degradation; N/sub 2/-H/sub 2/; SiO/sub 2/-SiON-SiO/sub 2/; SiO/sub 2//SiON/SiO/sub 2/ stacked film; forming gas annealing; leakage current characteristics; logic-embedded FeRAMs; metal wiring; reliability; Annealing; Capacitors; Degradation; Dielectrics; Ferroelectric films; Hydrogen; MOSFET circuits; Nonvolatile memory; Random access memory; Wiring;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1999. IEDM '99. Technical Digest. International

Conference_Location

Washington, DC, USA

Print_ISBN

0-7803-5410-9

Type

conf

DOI

10.1109/IEDM.1999.824271

Filename

824271