DocumentCode
1645802
Title
A novel photodetector based on the monolithic integration of the VCSOA and PIN
Author
Kai Wang ; Yanping Xi ; Liping Wang ; Xun Li
Author_Institution
Wuhan Nat. Lab. for Optoelectron., Huazhong Univ. of Sci. & Technol., Wuhan, China
fYear
2015
Firstpage
1
Lastpage
3
Abstract
A novel photodetector based on a VCSOA monolithically integrated with the PIN is proposed and analyzed in this paper. The gain bandwidth product around 470GHz has been achieved by simulation, showing its advantage over the conventional APD especially at a bit rate larger than 10Gb/s. The device has been fabricated and the preliminary testing results are presented.
Keywords
integrated optics; laser cavity resonators; monolithic integrated circuits; optical fabrication; optical receivers; optical testing; p-i-n photodiodes; photodetectors; semiconductor optical amplifiers; APD; PIN; VCSOA; gain bandwidth; monolithic integration; optical receiver; photodetector; vertical cavity semiconductor optical amplifier; Absorption; Bandwidth; Monolithic integrated circuits; Optical fiber communication; Photodetectors; Semiconductor optical amplifiers; Sensitivity; Monolithic integration; p-i-n diode (PIN); vertical cavity semiconductor optical amplifier (VCSOA);
fLanguage
English
Publisher
ieee
Conference_Titel
Optical Communications and Networks (ICOCN), 2015 14th International Conference on
Conference_Location
Nanjing
Type
conf
DOI
10.1109/ICOCN.2015.7203622
Filename
7203622
Link To Document