Title :
Level-specific strategy of KrF microlithography for 130 nm DRAMs
Author :
Inoue, S. ; Asano, M. ; Hosaka, K. ; Sutani, T. ; Azuma, T. ; Kawamura, D. ; Kobayashi, M. ; Miyoshi, S. ; Kanemitsu, H. ; Tanaka, S. ; Kotani, T. ; Tabata, Y. ; Tsuchida, K. ; Kohyama, Y. ; Kawamura, E.
Author_Institution :
Microelectron. Eng. Lab., Toshiba Corp., Yokohama, Japan
Abstract :
This paper reports technologies that enable KrF microlithography to be extended to 130 nm generation devices. Firstly, focus and dose budget analyses are carried out carefully to estimate their total deviations. Secondly, level specific cell-array patterns and exposure conditions are optimized for obtaining more process windows than the deviations by experiment and simulation. Optical proximity effect (OPE) and process proximity effect (PPE) for each level are investigated for core and peripheral circuit patterns. The key technologies for KrF microlithography, i.e. resolution enhancement technologies (RET) and process proximity correction (PPC), are discussed with a view to realizing 130 nm DRAMs.
Keywords :
CMOS memory circuits; DRAM chips; image resolution; krypton compounds; optical focusing; proximity effect (lithography); ultraviolet lithography; 130 nm; 130 nm DRAMs; KrF; KrF microlithography; core circuit patterns; depth of focus; dose budget analysis; exposure conditions; level specific cell-array patterns; level-specific strategy; optical proximity effect; peripheral circuit patterns; process proximity correction; process proximity effect; process windows; resolution enhancement technologies; total deviations; Geometry; Laboratories; Lighting; Lithography; Microelectronics; Proximity effect; Random access memory; Resists; Tin; Ultra large scale integration;
Conference_Titel :
Electron Devices Meeting, 1999. IEDM '99. Technical Digest. International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-5410-9
DOI :
10.1109/IEDM.1999.824273
