Title :
Indium Antimonide Based Technology for RF Applications
Author :
Ashley, T. ; Buckle, L. ; Emeny, M.T. ; Fearn, M. ; Hayes, D.G. ; Hilton, K.P. ; Jefferies, R. ; Martin, T. ; Phillips, T.J. ; Powell, J. ; Tang, A.W.-H. ; Wallis, D. ; Wilding, P.J.
Author_Institution :
Malvern Technol. Centre Malvern, QinetiQ, Worcestershire
Abstract :
Indium antimonide has the highest electron mobility and saturation velocity of any semiconductor, so gives the prospect of extremely high frequency operation with very low power dissipation. We report uncooled transistors with cut-off frequency of 340 GHz at a source-drain voltage of 0.5 V, leading towards this goal
Keywords :
electron mobility; field effect transistors; high electron mobility transistors; indium compounds; quantum wells; semiconductor device breakdown; semiconductor device models; 0.5 V; 340 GHz; FET; HEMT; InSb; electron mobility; indium antimonide based technology; power dissipation; radiofrequency applications; saturation velocity; uncooled transistors; Aluminum; Electron mobility; Etching; FETs; Indium; Molecular beam epitaxial growth; Radio frequency; Silicon; Tellurium; Voltage; FET; HEMT; InSb; indium antimonide; transistor;
Conference_Titel :
Compound Semiconductor Integrated Circuit Symposium, 2006. CSIC 2006. IEEE
Conference_Location :
San Antonio, TX
Print_ISBN :
1-4244-0126-7
Electronic_ISBN :
1-4244-0127-5
DOI :
10.1109/CSICS.2006.319918
