Dual-band Class-ABJ AlGaN/GaN high power amplifier

Author

Carrubba, V. ; Maroldt, S. ; Musser, M. ; Walcher, H. ; Schlechtweg, Michael ; Quay, Ruediger ; Ambacher, Oliver

Author_Institution

Fraunhofer Inst. for Appl. Solid State Phys. (IAF), Freiburg, Germany

fYear

2012

Firstpage

635

Lastpage

638

Abstract

This paper presents a dual-band multiharmonic Class-ABJ high power amplifier (PA) realized in AlGaN/GaN technology. In the Class-ABJ theory power and efficiency are theoretically maintained constant for the wide band spectrum frequency due to the ability to accommodate simultaneous fundamental and harmonic reactive terminations. Here it will be shown that by using the Class-ABJ theory, it is possible to optimize power, gain and efficiency for different frequency bands in a high PA design. The realized Class-ABJ power amplifier delivers drain efficiency greater than 55% with output power and gain greater than 42.4-44.4 dBm and 10-11 dB respectively for the two frequency bands 2.05-2.22 GHz and 2.45-2.58 GHz at around 2-3 dB of compression level.

Keywords

III-V semiconductors; UHF power amplifiers; aluminium compounds; gallium compounds; wide band gap semiconductors; AlGaN-GaN; PA design; dual-band multiharmonic class-ABJ high power amplifier; efficiency optimization; frequency 2.05 GHz to 2.22 GHz; frequency 2.45 GHz to 2.58 GHz; fundamental reactive terminations; gain optimization; harmonic reactive terminations; power optimization; wideband spectrum frequency; Aluminum gallium nitride; Gain; Gallium nitride; Harmonic analysis; Impedance; Power amplifiers; Power generation; Class-J; GaN; broadband amplifiers; high power amplifiers; multiband;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Integrated Circuits Conference (EuMIC), 2012 7th European

Conference_Location

Amsterdam

Print_ISBN

978-1-4673-2302-4

Electronic_ISBN

978-2-87487-026-2

Type

conf

Filename

6483880