Title :
Improvement of direct-tunneling gate leakage current in ultra-thin gate oxide CMOS with TiN gate electrode using non-doped selective epitaxial Si channel technique
Author :
Momose, Hisayo Sasaki ; Ohguro, Tatsuya ; Morifuji, E. ; Sugaya, H. ; Nakamura, Shigenari ; Yoshitomi, T. ; Kimijima, H. ; Morimoto, Takuya ; Matsuoka, F. ; Katsumata, Y. ; Ishiuchi, H. ; Iwai, Hisato
Author_Institution :
Toshiba Corp., Yokohama, Japan
Abstract :
A non-doped selective epitaxial Si channel technique has been applied to ultra-thin gate oxide CMOS transistors with TiN and polysilicon gate electrodes, and its effect on direct-tunneling gate leakage current has been investigated. It was found that the epitaxial Si channel noticeably reduces the direct-tunneling gate leakage current in both the TiN and polysilicon gate electrode cases. Improved drain current drive and transconductance of the epitaxial channel MOSFETs with ultra-thin gate oxides in the direct-tunneling regime has been also demonstrated.
Keywords :
CMOS integrated circuits; MOSFET; chemical vapour deposition; leakage currents; semiconductor device measurement; semiconductor epitaxial layers; tunnelling; 1.5 nm; CMOS transistors; Si; TiN; TiN gate electrode; direct-tunneling gate leakage current; drain current drive; epitaxial channel MOSFETs; nondoped selective epitaxial Si channel technique; polysilicon gate electrode; transconductance; ultra-thin gate oxide CMOS; CMOS technology; Electrodes; Epitaxial layers; Leakage current; MOSFETs; Silicon; Substrates; Tin; Transconductance; Tunneling;
Conference_Titel :
Electron Devices Meeting, 1999. IEDM '99. Technical Digest. International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-5410-9
DOI :
10.1109/IEDM.1999.824275
