DocumentCode :
1645890
Title :
A 30W, 46% PAE S-band GaN HEMT MMIC power amplifier for Radar applications
Author :
Jardel, O. ; Olivier, Michel ; Lancereau, D. ; Aubry, Raphael ; Chartier, E. ; Sarazin, N. ; Di Forte Poisson, M. ; Piotrowicz, S. ; Stanislawiak, M. ; Rimbert, D. ; Delage, S.L. ; Eudeline, Philippe
Author_Institution :
III-V Lab., Alcatel-Thales, Marcoussis, France
fYear :
2012
Firstpage :
639
Lastpage :
642
Abstract :
This paper deals with the performances of 30 W GaN HEMT MMIC power amplifiers designed for Radar applications in S-band. These amplifiers deliver 30 W, 46% PAE with ~20 dB power gain in the [2.7 - 3.7 GHz] frequency band, and 34 W, 50% PAE with ~20.5 dB power gain in the [2.9 - 3.5 GHz] frequency band, in pulsed conditions (50 μs/10%). The device processing and the transistor performances are presented, as well as the design and the characterizations of the amplifiers. Pulse to pulse stability measurements were also carried out in order to evaluate their behavior under radar waveforms constraints.
Keywords :
MMIC power amplifiers; radar applications; GaN; HEMT; MMIC power amplifier; PAE; S-band; device processing; power 30 W; pulse to pulse stability measurements; radar applications; transistor performances; Gain; Gallium nitride; MMICs; Power amplifiers; Stability analysis; Thermal stability; Transistors; Amplifier; GaN HEMT; S-Band; pulse to pulse stability;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Integrated Circuits Conference (EuMIC), 2012 7th European
Conference_Location :
Amsterdam
Print_ISBN :
978-1-4673-2302-4
Electronic_ISBN :
978-2-87487-026-2
Type :
conf
Filename :
6483881
Link To Document :
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