DocumentCode
1645927
Title
Highly integrated S and C-band internally-matched Quasi-MMIC power GaN devices
Author
Camiade, M. ; Bouw, D. ; Mouginot, G. ; Auvray, F. ; Alleaume, P.F. ; Floriot, D. ; Favede, L. ; Thorpe, Julie ; Stieglauer, H.
Author_Institution
United Monolithic Semicond. SAS, Villebon-sur-Yvette, France
fYear
2012
Firstpage
643
Lastpage
646
Abstract
This paper presents recent results on highly integrated internally-matched Gallium Nitride transistors in S and C-band. The concept and the advantages of “Quasi MMIC” devices are described, showing the high potentialities for performance improvements and cost reductions. Using Gallium Arsenide based passive MMICs for input and/or output matching, more than 50W has been obtained at S-band with more than 55% PAE from 2.9GHz to 3.5GHz and more than 45% PAE at C-band @ 6.2GHz.
Keywords
MMIC; gallium arsenide; C band internally matched quasi MMIC power device; S band internally matched quasi MMIC power device; gallium arsenide; gallium nitride transistors; passive MMIC; Dielectric constant; Gallium arsenide; Gallium nitride; Impedance matching; MMICs; Substrates; Transistors; GaAs; GaN; MMIC; PAE; PCB;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Integrated Circuits Conference (EuMIC), 2012 7th European
Conference_Location
Amsterdam
Print_ISBN
978-1-4673-2302-4
Electronic_ISBN
978-2-87487-026-2
Type
conf
Filename
6483882
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