Title :
Actively biased p-channel MOSFET studied with scanning capacitance microscopy
Author :
Nakakura, C.Y. ; Hetherington, D.L. ; Shaneyfelt, M.R. ; Dodd, P.E. ; De Wolf, P.
Author_Institution :
Microelectron. Dev. Lab., Sandia Nat. Labs., Albuquerque, NM, USA
Abstract :
Scanning capacitance microscopy was used to study the cross section of an operating p-channel MOSFET. We discuss the novel test structure design and the modifications to the SCM hardware that enabled us to perform SCM while applying dc bias voltages to operate the device. The results are compared with device simulations performed with Davinci.
Keywords :
MOSFET; capacitance measurement; scanning probe microscopy; semiconductor device testing; Davinci simulation; active DC bias; cross-section; p-channel MOSFET; scanning capacitance microscopy; test structure; Bonding; Capacitance measurement; Electronics packaging; Hardware; Laboratories; MOSFET circuits; Microscopy; Testing; Voltage; Wires;
Conference_Titel :
Electron Devices Meeting, 1999. IEDM '99. Technical Digest. International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-5410-9
DOI :
10.1109/IEDM.1999.824279
