Title :
A balanced 2 watt compact PHEMT power amplifier MMIC for Ka-band applications
Author :
Shuoqi Chen ; Reese, E. ; Keon-Shik Kong
Author_Institution :
TriQuint Semicond., Richardson, TX, USA
Abstract :
A balanced form, compact power amplifier MMIC operating at Ka-band was designed and developed using TriQuint´s 3MI 0.25/spl mu/m gate length pHEMT technology. This balanced three-stage power amplifier, with chip size of 6.16mm/sup 2/ (2.8/spl times/2.2mm), on 100/spl mu/m GaAs substrate achieved 32.8dBm (1.9Watt) P/sub 1dB/ output power and saturated output power above 2 Watts with higher small signal gain than 18dB at 30GHz. This chip provides a high power and low cost benchmark solution for Ka-band radio market.
Keywords :
HEMT integrated circuits; III-V semiconductors; differential amplifiers; field effect MMIC; gallium arsenide; 0.25 micron; 18 dB; 2 W; 30 GHz; 3MI process; GaAs; GaAs PHEMT MMIC; Ka-band; balanced compact three-stage power amplifier; output power; small-signal gain; Bandwidth; Costs; FETs; Gallium arsenide; High power amplifiers; MMICs; PHEMTs; Power amplifiers; Power generation; Substrates;
Conference_Titel :
Microwave Symposium Digest, 2003 IEEE MTT-S International
Conference_Location :
Philadelphia, PA, USA
Print_ISBN :
0-7803-7695-1
DOI :
10.1109/MWSYM.2003.1212502
