Title :
1/f noise characterization of deep sub-micron dual thickness nitrided gate oxide n- and p-MOSFETs
Author :
D´Souza, S. ; Li-Ming Hwang ; Matloubian, M. ; Martin, S. ; Sherman, P. ; Joshi, A. ; Hong Wu ; Bhattacharya, S. ; Kempf, P.
Author_Institution :
Conexant Syst. Inc., Newport Beach, CA, USA
Abstract :
1/f-noise measurement results on thin and thick gate oxide MOSFETs fabricated in a dual gate thickness CMOS process technology have been reported in this work. The impact of gate oxide nitridation on 1/f noise has been separated from the effect of a transition from buried to surface channel p-MOSFET. An improvement in 1/f noise in MOSFETs fabricated using gate oxide nitridation via Nitrogen implantation is demonstrated.
Keywords :
1/f noise; MOSFET; nitridation; semiconductor device noise; 1/f noise; buried channel; deep submicron dual gate thickness CMOS process technology; gate oxide nitridation; n-MOSFET; nitrogen implantation; p-MOSFET; surface channel; 1f noise; CMOS process; CMOS technology; Circuit noise; Dielectrics; MOSFET circuits; Nitrogen; Noise measurement; Oxidation; Radio frequency;
Conference_Titel :
Electron Devices Meeting, 1999. IEDM '99. Technical Digest. International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-5410-9
DOI :
10.1109/IEDM.1999.824280
