Title :
A high power density, 6W MMIC for Ku/K-Band applications
Author :
Shimura, T. ; Satoh, T. ; Hasegawa, Y. ; Fukaya, J.
Author_Institution :
Fujitsu Quantum Devices Ltd., Tokyo, Japan
Abstract :
A Ku/K-Band very small size MMIC high power amplifier (HPA) providing 6W of CW output power, 23dB of gain and 30% power added efficiency for application in the Ku/K-Band is presented. It is produced on a low cost, commercially available 0.25um pHEMT process. This MMIC is composed of three stage pHEMT and chip size is 3.5 /spl times/ 3.0 mm/sup 2/. The HPA achieved 570 mW output power per 1 mm/sup 2/ die area. This value is the highest power density at Ku/K/Ka-Band reported to date.
Keywords :
HEMT integrated circuits; MMIC power amplifiers; field effect MMIC; 0.25 micron; 23 dB; 30 percent; 6 W; K-band; Ku-band; MMIC high power amplifier; PHEMT process; output power; power added efficiency; power density; Bonding; Costs; FETs; Gallium arsenide; High power amplifiers; K-band; MMICs; PHEMTs; Power amplifiers; Power generation;
Conference_Titel :
Microwave Symposium Digest, 2003 IEEE MTT-S International
Conference_Location :
Philadelphia, PA, USA
Print_ISBN :
0-7803-7695-1
DOI :
10.1109/MWSYM.2003.1212503
