X-band GaInP HBT 10 W high power amplifier including on-chip bias control circuit

Volume

2

fYear

2003

Firstpage

855

Abstract

A monolithic two stage high power amplifier (HPA) has been developed for X band applications. This amplifier is fabricated on UMS commercially available GaInP/GaAs HBT process. The MMIC HPA provides about 10 W output power from 8.4 to 10.4 GHz with a mean power added efficiency of about 35 % and a mean small signal gain of 16 dB. The HPA was also validated in a wide temperature range (-30 - +80/spl deg/C) from small to large input signal and for extensive frequencies. The most significant feature of the new HPA is the use of on-chip bias control circuit allowing a linear control of collector current independently of the temperature.

Keywords

III-V semiconductors; MMIC power amplifiers; bipolar MMIC; gallium compounds; heterojunction bipolar transistors; indium compounds; -30 to 80 degC; 10 W; 16 dB; 35 percent; 8.4 to 10.4 GHz; GaInP-GaAs; GaInP/GaAs HBT MMIC; X-band; monolithic two-stage high power amplifier; on-chip bias control circuit; output power; power added efficiency; small-signal gain; Circuits; Gain; Gallium arsenide; Heterojunction bipolar transistors; High power amplifiers; MMICs; Power amplifiers; Power generation; Temperature control; Temperature distribution;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2003 IEEE MTT-S International

Conference_Location

Philadelphia, PA, USA

ISSN

0149-645X

Print_ISBN

0-7803-7695-1

Type

conf

DOI

10.1109/MWSYM.2003.1212504

Filename

1212504