Title :
A 0.16 /spl mu/m modular BiCMOS (COM2-BiCMOS) technology for RF communication ICs
Author :
Carroll, M.S. ; Ivanov, T.G. ; Yih-Feng Chyan ; Nguyen, D.P. ; Chunchieh Huang ; Ting-Ih Hsu ; Chung Wai Leung ; Cochran, W.T.
Author_Institution :
Lucent Technol., Bell Labs., Orlando, FL, USA
Abstract :
A 0.16 /spl mu/m modular BiCMOS technology (COM2-BiCMOS) has been developed for radio-frequency communication ICs. The technology includes a low-cost, high-performance, single-poly NPN bipolar transistor with f/sub T/=45 GHz and BV/sub CEO/=4.0 V. With a f/sub T/BV/sub CEO/ product of 180 GHz-V, the bipolar transistor performance in COM2-BiCMOS is comparable to many double-poly Si or SiGe transistors without the additional process complexity and cost.
Keywords :
BiCMOS integrated circuits; UHF integrated circuits; integrated circuit technology; mixed analogue-digital integrated circuits; telecommunication equipment; 0.16 micron; COM2-BiCMOS; RF communication ICs; modular BiCMOS technology; radiofrequency ICs; single-poly NPN bipolar transistor; BiCMOS integrated circuits; Bipolar transistors; CMOS process; CMOS technology; Communications technology; Costs; Implants; Ion implantation; Radio frequency; Silicon;
Conference_Titel :
Electron Devices Meeting, 1999. IEDM '99. Technical Digest. International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-5410-9
DOI :
10.1109/IEDM.1999.824284
