Title :
A low dark current double membrane poly-Si FT-technology for 2/3 inch 6M pixel CCD imagers
Author :
Peek, H.L. ; Verbugt, W.E. ; Heijns, H.
Author_Institution :
Philips Semicond. Image Sensors, Eindhoven, Netherlands
Abstract :
A 2/3 inch optical format 6M pixel FF-CCD image sensor with pixel dimensions of 3/spl times/3 /spl mu/m/sup 2/ is reported for the first time. To realize a low dark current of 800 pA/cm/sup 2/ at 60/spl deg/C, a high charge handling capacity of 40 kel/pixel, and a high dynamic range of 63 dB, this sensor uses the following key processing technologies: 1) an adapted and improved (in comparison to previously reported work) double membrane poly-Si gate technology with ND processing, 2) an improved supply of hydrogen to the active Si/SiO/sub 2/ interface, 3) an optimized front-end technology.
Keywords :
CCD image sensors; dark conductivity; integrated circuit technology; membranes; 0.67 in; 3 mum; 60 C; 6M pixel CCD imagers; ND processing; active Si/SiO/sub 2/ interface; dark current double membrane poly-Si FT-technology; double membrane poly-Si gate technology; high charge handling capacity; high dynamic range; low dark current; optimized front-end technology; pixel dimensions; processing technologies; Biomembranes; Cameras; Charge coupled devices; Dark current; Hydrogen; Image sensors; Neodymium; Optical sensors; Pixel; Tungsten;
Conference_Titel :
Electron Devices Meeting, 1999. IEDM '99. Technical Digest. International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-5410-9
DOI :
10.1109/IEDM.1999.824287
