The RF Characteristics of the RF MEMS Switch as the Substrate Resistivity

Author

Kang, S. ; Park, S. ; Kim, H.C. ; Chun, K.

Author_Institution

Sch. of Electr. Eng. & Comput. Sci., Seoul Nat. Univ., Seoul

fYear

2008

Firstpage

285

Lastpage

287

Abstract

This paper presents the RF characteristics of the RF MEMS switch as the silicon substrate resistivity. The larger the resistivity of silicon substrate is, the larger the insertion loss of the RF MEMS switch is. When the RF MEMS switch is fabricated with the single crystalline silicon, the RF characteristics are changed by resistivity of silicon. It is necessary to study the change of RF characteristics as the substrate resistivity. The RF characteristics were simulated with different resistivity of silicon substrate. The RF MEMS switches were fabricated on each substrate with different resistivity. The RF MEMS switch was fabricated with the resistivity of 10 ohm-cm, the insertion loss of that is about 0.2 dB at 6 GHz. And the RF MEMS switch was fabricated with the resistivity of 500 Ohm-cm, the insertion loss of that is about 0.6 dB at 6 GHz.

Keywords

crystals; electrical resistivity; microswitches; silicon; RF MEMS switch; RF characteristics; crystalline silicon; frequency 6 GHz; loss 0.2 dB; loss 0.6 dB; resistivity 10 ohmcm; resistivity 500 ohmcm; silicon substrate resistivity; Conductivity; Contacts; Coplanar waveguides; Crystallization; Dielectric substrates; Insertion loss; Radio frequency; Radiofrequency microelectromechanical systems; Silicon; Switches;

fLanguage

English

Publisher

ieee

Conference_Titel

Millimeter Waves, 2008. GSMM 2008. Global Symposium on

Conference_Location

Nanjing

Print_ISBN

978-1-4244-1885-5

Electronic_ISBN

978-1-4244-1886-2

Type

conf

DOI

10.1109/GSMM.2008.4534624

Filename

4534624