Title :
A monolithic integrated 150 GHz SiGe HBT push-push VCO with simultaneous differential V-band output
Author :
Baeyens, Y. ; Chen, Y.K.
Author_Institution :
Lucent Technol. Bell Labs., Murray Hill, NJ, USA
Abstract :
A fully integrated push-push voltage controlled oscillator (VCO) with simultaneous differential fundamental output is realized using an advanced 0.13/spl mu/m SiGe HBT process. A maximum oscillation frequency of 155 GHz, up to -5 dBm output power at 150 GHz and 30 GHz wide tuning range is achieved. The measured phase-noise in the linear tuning range is around -85 dBc/Hz at 1 MHz offset from carrier. Up to +3 dBm output power and 6 dB lower phase noise is obtained at each of the fundamental frequency differential ports. For a similar but fixed frequency oscillator, -2 dBm output power and a low phase noise of less than -90 dBc/Hz is measured at 1 MHz from the 140 GHz carrier.
Keywords :
Ge-Si alloys; bipolar transistor circuits; circuit tuning; heterojunction bipolar transistors; millimetre wave oscillators; phase noise; semiconductor materials; voltage-controlled oscillators; 0.13 micron; 150 GHz; SiGe; SiGe HBT process; maximum oscillation frequency; monolithic integrated push-push voltage controlled oscillator; output power; phase noise; simultaneous differential V-band output; tuning range; Frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Phase measurement; Phase noise; Power generation; Power measurement; Silicon germanium; Tuning; Voltage-controlled oscillators;
Conference_Titel :
Microwave Symposium Digest, 2003 IEEE MTT-S International
Conference_Location :
Philadelphia, PA, USA
Print_ISBN :
0-7803-7695-1
DOI :
10.1109/MWSYM.2003.1212509