Title :
On the dependence of the thermal resistance on collector properties of SiGe HBTs
Author :
Korndörfer, F. ; Wipf, Ch
Author_Institution :
Innovations for High Performance Microelectron., Frankfurt (Oder), Germany
Abstract :
The dependence of the thermal resistance on the collector properties was investigated. Transistors with same base-emitter construction but different collector doping were measured. Measurements show lower thermal resistance on transistors with lower collector doping. The different power distribution in the transistor types was identified as a source of different thermal resistance. The results were verified by thermal 3D simulation.
Keywords :
Ge-Si alloys; heterojunction bipolar transistors; thermal resistance; HBT; SiGe; base-emitter construction; collector doping; collector property; power distribution; thermal 3D simulation; thermal resistance; Current measurement; Electrical resistance measurement; Heating; Temperature measurement; Thermal resistance; Transistors; HBT; SiGe; bipolar modelling and simulation; self-heating; thermal resistance;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2010 IEEE
Conference_Location :
Austin, TX
Print_ISBN :
978-1-4244-8578-9
DOI :
10.1109/BIPOL.2010.5667991
