A Fully Matched Ku-band 9W PHEMT MMIC High Power Amplifier

Author

Lin, C.H. ; Liu, H.Z. ; Chu, C.K. ; Huang, H.K. ; Wang, Y.H. ; Liu, C.C. ; Chang, C.H. ; Wu, C.L. ; Chang, C.S.

Author_Institution

Dept. of Electr. Eng., National Cheng-Kung Univ., Tainan

fYear

2006

Firstpage

165

Lastpage

168

Abstract

A 9 watt AlGaAs/InGaAs/GaAs PHEMT MMIC power amplifier for Ku band applications is presented. This two-stage amplifier with chip size of 11.12 mm² (4.52 mm times 2.46 mm) is designed to fully match 50 ohm input and output impedance. With 8 volts and 900 mA DC bias condition, 12 dB small signal gain, 39.5 dBm (9 Watt) saturated output power with 30% power-added efficiency from 14 to 14.2 GHz can be achieved. This high power amplifier also achieved the best power densities (809 mW/ mm²) at Ku band reported to date

Keywords

HEMT integrated circuits; III-V semiconductors; MMIC power amplifiers; aluminium compounds; gallium arsenide; indium compounds; 12 dB; 14 to 14.2 GHz; 50 ohm; 8 V; 9 W; 900 mA; AlGaAs-InGaAs-GaAs; Ku band applications; PHEMT MMIC high power amplifier; fully matched Ku-band power amplifier; two-stage amplifier; Circuit simulation; Costs; FETs; High power amplifiers; Impedance matching; Indium gallium arsenide; MMICs; PHEMTs; Power amplifiers; Power generation; Ku-Band; MMIC; PHEMT; power amplifier;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductor Integrated Circuit Symposium, 2006. CSIC 2006. IEEE

Conference_Location

San Antonio, TX

Print_ISBN

1-4244-0126-7

Electronic_ISBN

1-4244-0127-5

Type

conf

DOI

10.1109/CSICS.2006.319887

Filename

4110009