Title :
Interfacial properties of a Si-SiO2-Si structure fabricated by a modified silicon direct bonding technique
Author :
Kim, E.D. ; Kim, S.C. ; Park, J.M. ; Min, W.G. ; Grekhov, I.V. ; Argunova, T.S. ; Beliakova, E.I. ; Berman, B.S. ; Kosting, L.S. ; Mosina, G.N. ; Kudryavtzeva, T.V.
Author_Institution :
Power Semicond. Res. Team, Korea Electrotechnol. Res. Inst., Changwon, South Korea
Abstract :
A modified silicon direct bonding (SDB) method employing the wet chemical coupling of tetra-ethoxysilane was applied for fabrication of Si-SiO2-Si structure. The SiO2 layer of 1.2 μm thick has been fabricated consistently with a dielectric breakdown strength higher than 106 V/cm and a relative dielectric constant εr=4.0±0.2. Capacitance-Voltage measurement showed that the fixed trap concentration was about 1012 cm-2 at Si-SiO2 interface
Keywords :
electric breakdown; electric strength; electron traps; elemental semiconductors; interface states; permittivity; semiconductor-insulator-semiconductor structures; silicon; silicon compounds; silicon-on-insulator; wafer bonding; Si-SiO2-Si; Si-SiO2-Si structure; capacitance-voltage measurement; dielectric breakdown strength; dielectric constant; fabrication; fixed trap concentration; interfacial properties; silicon direct bonding; tetra-ethoxysilane; wet chemical coupling; Capacitance measurement; Chemicals; Dielectric measurements; Electrodes; Length measurement; Semiconductor films; Silicon compounds; Surface topography; Tellurium; Wafer bonding;
Conference_Titel :
Properties and Applications of Dielectric Materials, 1997., Proceedings of the 5th International Conference on
Conference_Location :
Seoul
Print_ISBN :
0-7803-2651-2
DOI :
10.1109/ICPADM.1997.617600
