Title :
A 5.2GHz variable gain low noise amplifier RFIC with adaptive biasing for improved linearity
Author :
Xu, Hua ; Shi, Yin ; Dai, Fa Foster
Author_Institution :
SuZhou-CAS Semicond. Integration R&D Center, SuZhou, China
Abstract :
This paper presents a 5.2-GHz adaptively-biased variable gain- low noise amplifier (VG-LNA) using SiGe BiCMOS technology. Usage of bias and gain control simultaneously to achieve high input-referred third-order intercept point (IIP3) is demonstrated. A charge pump is used to transform the RF output signal of LNA to dc control signal. Measurement results show that with 3.3V power supply, the LNA exhibits a tunable bias from 3mA to 10.85mA with gain tuning range of 13dB, and a 14.5dBm IIP3 improvement. In the high gain mode, the noise figure of 2.82 of the LNA is achieved.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; MMIC amplifiers; charge pump circuits; low noise amplifiers; IIP3; LNA; RFIC; SiGe; SiGe BiCMOS technology; adaptive biasing; charge pump; current 3 mA to 10.85 mA; frequency 5.2 GHz; high input-referred third-order intercept point; improved linearity; noise figure 2.82 dB; variable gain low noise amplifier; voltage 3.3 V; Charge pumps; Gain; Gain control; Linearity; Noise figure; RF signals; Radio frequency; IIP3; LNA; WLAN; adaptive biasing; charge pump; variable gain;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2010 IEEE
Conference_Location :
Austin, TX
Print_ISBN :
978-1-4244-8578-9
DOI :
10.1109/BIPOL.2010.5667995
