Title :
InGaP-Plus - A major advance in GaAs HBT Technology
Author :
Gupta, Aditya ; Peatman, Bill ; Shokrani, Mohsen ; Krystek, Wojciech ; Arell, Tom
Author_Institution :
ANADIGICS, Inc., Warren, NJ
Abstract :
InGaP-Plus, a manufacturable GaAs BiFET process has been developed at ANADIGICS for high volume production of ICs for the wireless and broadband businesses. The epitaxial structure is such that the HBT and pHEMT devices can be optimized independently, without compromise, for the application at hand. The process uses previously developed process modules and is only moderately more complex than a stand-alone HBT flow. Tens of millions of WLAN and cellular handset PAs have been manufactured using InGaP-Plus with yields comparable to HBT-only processes. This new process technology offers new degrees of freedom in RFIC design and has become the technology of choice for new products. An example of one such product is provided in this paper
Keywords :
BiCMOS integrated circuits; III-V semiconductors; cellular radio; gallium compounds; heterojunction bipolar transistors; high electron mobility transistors; indium compounds; radiofrequency integrated circuits; wireless LAN; ANADIGICS; BiCMOS integrated circuit; BiFET process; GaAs; HBT technology; InGaP; InGaP-Plus; RFIC design; WLAN; broadband business; cellular handset; epitaxial structure; pHEMT devices; wireless business; BiCMOS integrated circuits; Cost function; FETs; Gallium arsenide; Heterojunction bipolar transistors; High power amplifiers; Low-noise amplifiers; Manufacturing processes; PHEMTs; Switches; BiCMOS; BiFET; FET; GaAs; HBT; InGaP; device integration; manufacturable; pHEMT;
Conference_Titel :
Compound Semiconductor Integrated Circuit Symposium, 2006. CSIC 2006. IEEE
Conference_Location :
San Antonio, TX
Print_ISBN :
1-4244-0126-7
Electronic_ISBN :
1-4244-0127-5
DOI :
10.1109/CSICS.2006.319891
