• DocumentCode
    1646348
  • Title

    Degradation of HBTs due to the interface states of Si3N 4 on GaAs

  • Author

    Song, Chung-Kun ; Kim, Duk-Young ; Park, Jae-Hong

  • Author_Institution
    Dept. of Electron. Eng., Dong-A Univ., Pusan, South Korea
  • Volume
    1
  • fYear
    1997
  • Firstpage
    352
  • Abstract
    The degradation of AlGaAs/GaAs HBTs becomes a hot issue. One of the origins is the variation of interface states between the passivated-dielectric and GaAs base. In this paper we investigated the instability of the interface states between Si3N4 as the dielectric and the extrinsic GaAs base by the accelerated-life test. The type of degradation was analyzed and the empirical formulas for the degradation of device parameters such as the emitter-base junction off-set voltage and the base leakage current, which are related to the variation of the interface states, were extracted
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; interface states; passivation; silicon compounds; AlGaAs-GaAs-Si3N4; AlGaAs/GaAs HBT; Si3N4 passivated dielectric; accelerated life test; base leakage current; degradation; emitter-base junction off-set voltage; instability; interface states; Degradation; Etching; Gallium arsenide; Heterojunction bipolar transistors; Interface states; Leakage current; Life estimation; MMICs; Stress; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Properties and Applications of Dielectric Materials, 1997., Proceedings of the 5th International Conference on
  • Conference_Location
    Seoul
  • Print_ISBN
    0-7803-2651-2
  • Type

    conf

  • DOI
    10.1109/ICPADM.1997.617603
  • Filename
    617603
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1646348