X- and Ku-band internally matched GaN amplifiers with more than 100W output power

Author

Noto, H. ; Maehara, Hiroaki ; Uchida, Hironaga ; Koyanagi, Mitsumasa ; Utsumi, Hiroaki ; Nishihara, J. ; Otsuka, Hiroyuki ; Yamanaka, Keiji ; Nakayama, Makoto ; Hirano, Yoshikuni

Author_Institution

Inf. Technol. R&D Center, Mitsubishi Electr. Corp., Kamakura, Japan

fYear

2012

Firstpage

695

Lastpage

698

Abstract

In this paper, internally matched GaN-HEMT high power amplifiers operating at X- and Ku-bands are presented. For the X-band amplifier, small package is adopted to reduce the over all RF module size. For the Ku-band amplifier, 4 transistor power bars are combined to obtain 100W output power. To the best of our knowledge, this is the first report that more than 100W output power is obtained from single solid state device in Ku-band.

Keywords

III-V semiconductors; electronics packaging; gallium compounds; high electron mobility transistors; microwave power amplifiers; wide band gap semiconductors; GaN; Ku-band internally matched amplifiers; RF module size; X-band internally matched amplifiers; internally matched-HEMT high power amplifiers; single solid state device; transistor power bars; Gallium nitride; HEMTs; MODFETs; Microwave amplifiers; Microwave circuits; Power amplifiers; Power generation;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Integrated Circuits Conference (EuMIC), 2012 7th European

Conference_Location

Amsterdam

Print_ISBN

978-1-4673-2302-4

Electronic_ISBN

978-2-87487-026-2

Type

conf

Filename

6483895