GOI properties of W-polycide formed by DCS processing

Author

Lee, Cheol-In ; Choi, Hyun-Sik ; Kwon, Ho-Young ; Kim, Chang-II ; Chang, Eui-Goo

Author_Institution

Chungang Univ., Seoul, South Korea

Volume

1

fYear

1997

Firstpage

356

Abstract

GOI properties formed by tungsten silicide (WSix) deposited by LPCVD employing dichlorosilane (SiH₂Cl₂, DCS) and monosilane (SiH₄, MS) reduction of tungsten hexafluoride (WF ₆) has been studied. The sheet resistivity of as-deposited MS-WSix higher than that of the DCS-WSix, and after annealing both of it drop drastically but it is lower in MS-WSix than DCS-WSix. These result was confirmed by TEM analysis which indicates that the behavior of resistivity is due to grain growth rate and rather correlated with the formation of hexagonal phase of WSix. It was revealed that time-to-breakdown of DCS-WSix, where the current density was 100 mA/cm ², was about three times longer than MS-WSix. It was also observed that DCS-WSix film shows better step coverage

Keywords

CVD coatings; annealing; electrical resistivity; grain growth; metallisation; transmission electron microscopy; tungsten compounds; DCS processing; GOI; LPCVD; TEM; WSi; WSix film; annealing; current density; dichlorosilane; grain growth; monosilane; reduction; sheet resistivity; step coverage; time-to-breakdown; tungsten hexafluoride; tungsten polycide; Annealing; Conductivity; Crystallization; Degradation; Distributed control; Educational institutions; Grain size; Semiconductor films; Silicides; Tungsten;

fLanguage

English

Publisher

ieee

Conference_Titel

Properties and Applications of Dielectric Materials, 1997., Proceedings of the 5th International Conference on

Conference_Location

Seoul

Print_ISBN

0-7803-2651-2

Type

conf

DOI

10.1109/ICPADM.1997.617604

Filename

617604